Solution-processed crystalline organic integrated circuits

نویسندگان

چکیده

The major advantages of organic electronics are their solution processability and unique optoelectronic performance. long-range ordered single-crystal semiconductor provides the best device performance, as it guarantees efficient charge injection transport minimum defect states. Thus, a facial solution-printing-based method to fabricate devices circuits is great importance development electronics, but its still challenging. Herein, we propose general strategy construct an array entirely by solution-based methods. Taking field-effect transistors (OFETs) example, recent progress crystal fabrication, patterning, high-resolution printed contacts summarized. Finally, future research directions for this field suggested. IntroductionOrganic electronic known potential candidates next-generation flexible wearable due low fabrication cost, large-area processability, mechanical flexibility.1Kaltenbrunner M. Sekitani T. Reeder J. Yokota Kuribara K. Tokuhara Drack Schwodiauer R. Graz I. Bauer-Gogonea S. et al.An ultra-lightweight design imperceptible plastic electronics.Nature. 2013; 499: 458-463Crossref PubMed Scopus (1615) Google Scholar, 2Ren X.C. Pei Peng B.Y. Zhang Z.C. Wang Z.R. X.Y. Chan P.K.L. A low-operating-power active-matrix organic-transistor temperature-sensor array.Adv. Mater. 2016; 28: 4832-4838Crossref (174) 3Gelinck G. Heremans P. Nomoto Anthopoulos Organic in optical displays microelectronic applications.Adv. 2010; 22: 3778-3798Crossref (524) Scholar They have shown performance superior that amorphous Si impressive stability.4Yao Y.F. Chen Y. H.L. Samorì photodetectors based on supramolecular nanostructures.SmartMat. 2020; 1: e1009Crossref 5Sirringhaus H. 25th anniversary article: transistors: path beyond silicon.Adv. 2014; 26: 1319-1335Crossref (1640) 6Yamamura A. Sakon Takahira Wakimoto Sasaki Okamoto Takeya High-speed transistor responding very high frequency band.Adv. Funct. 30: 1909501Crossref (24) 7Tang Q. G.P. Jiang B.H. Ji D.Y. Kong H.H. Riehemann Q.M. Fuchs Self-assembled fullerene (C60)-pentacene superstructures photodetectors.SmartMat. 2021; 2: 109-118Crossref 8Acharya Gunder D. Breuer Schmitz Klauk Witte Stability thin-film ultrathin films dinaphtho[2,3-b:20,30-f]thieno[3,2-b]thiophene (DNTT).J. Chem. C. 9: 270-280Crossref one most important realize logic computing function well driving display back panel, sensors, memory cells. These use conjugated small molecules polymers active layers, so electrical properties highly reliant π-electron overlap between molecules. semiconductors (OSCs) with periodic structures (i.e., small-molecular single crystals) ideal high-performance because following reasons:9Wang C.L. Dong Hu W.P. Liu Y.Q. Zhu D.B. Semiconducting pi-conjugated systems material odyssey electronics.Chem. Rev. 2012; 112: 2208-2267Crossref (0) Scholar,10Zhang X.T. crystals photonics.Adv. 2018; 1801048Crossref (25) (1) few structural defects, including grain boundaries impurities, guarantee transport; (2) longer exciton diffusion length leads excellent properties; (3) molecular packing improves operation stability uniformity.In addition materials aspect, many can dissolve common solvents, allowing various low-cost techniques, such inkjet printing (IJP),11Kim Bae Noh S.H. Jang Kim Park C.E. Direct writing aligning small-molecule via “dragging mode” electrohydrodynamic jet arrays.J. Phys. Lett. 2017; 8: 5492-5500Crossref (32) 12Minemawari Yamada Matsu Tsutsumi Haas Chiba Inkjet films.Nature. 2011; 475: 364-367Crossref (1324) 13Kwon Takeda Fukuda Cho Tokito Jung Three-dimensional, inkjet-printed integrated 100% yield, uniformity, long-term stability.ACS Nano. 10: 10324-10330Crossref (76) screen printing,14Peng Ren Roberts R.C. High driver developed paper substrate.Sci. Rep. 4: 6430Crossref (84) Scholar,15Duan S.M. Gao X. Yang F.X. M.X. Scalable crystalline thin film channel-restricted toward arrays.Adv. 2019; 31: 1807975Crossref (33) gravure printing,16Søndergaard R.R. Hosel Krebs F.C. Roll-to-roll large area functional materials.J. Polym. Sci. Pol. 51: 16-34Crossref meniscus-based methods.17Giri Verploegen E. Mannsfeld S.C.B. Atahan-Evrenk D.H. Lee S.Y. Becerril H.A. Aspuru-Guzik Toney M.F. Bao Z.N. Tuning solution-sheared using lattice strain.Nature. 480: 504-508Crossref (570) 18Park K.S. Kwok J.J. Dilmurat Qu Kafle Luo S.-H. Olivier J.-K. Mei J.G. al.Tuning conformation, assembly, flow.Sci. Adv. 5: eaaw7757Crossref (43) 19Khim Ryu G.S. W.T. Y.-Y. Precisely controlled polymer transparent sensitive chemical sensors.Adv. 2752—2759Google solution-processed significantly reduce cost leave several remaining challenges regarding Most methods result poor control morphology. During printing, inadequate confinement ink-drying process creates undesired nucleation sites, resulting polycrystalline or even To take full advantage devices, while realizing simultaneously, single-crystalline desired, Only works demonstrated arrays processes.20Yamamura Matsui Uno Isahaya N. Tanaka Kudo Ito Mitsui Painting complementary demonstration digital wireless communication sensing tag.Adv. Electron. 3: 1600456Crossref (38) 21Yamamura Watanabe Mitani Tsurumi Kanaoka Wafer-scale, layer-controlled high-speed circuit operation.Sci. eaao5758Crossref (150) 22Luo Z.Z. Zeng J.P. Yu Z.H. Zhao Xie Lan R.F. Ma Z. Pan L.J. Cao Lu al.Sub-thermionic, ultra-high-gain circuits.Nat. Commun. 12: 1928Crossref systematic study relationship behavior processing should be provided. create arrays, direct novel patterning technologies not involving photolithography needed. Furthermore, resolution current state hinders especially OFETs operating at frequency, cutoff inversely proportional characteristic dimension device.23Klauk Will see gigahertz transistors?.Adv. 1700474Crossref (89) timely review focused would useful clearly summarize provide inspiration further field. Similar topics, electronics,24Fukuda Someya Recent technology.Adv. 29: 1602736Crossref (170) Scholar,25Mattana Loi Woytasik Barbaro Noël V. Piro B. Inkjet-printing: new technology transistors.Adv. Technol. 1700063Crossref (56) electronics,26Wang L. crystals.Chem. Soc. 47: 422-500Crossref 27Zhang 28Wang Sun 48: 1492-1530Crossref 29Yu P.P. Zhen Y.G. Crystal engineering materials.Chem. 1-40Abstract Full Text PDF (40) 30Wu Li Xue Preparation heterojunctions electronics.Adv. 1606101Crossref (27) crystals, been summarized reviews,31Qu Diao Flow-directed crystallization electronics.Acc. Res. 49: 2756-2764Crossref (55) Scholar,32Diao Shaw Morphology strategies solution- processed films.Energy Environ. 7: 2145-2159Crossref no has provided overview specifically focusing fabricated solution-printing methods.In review, comprehensive summary We firstly characteristics OSC from physics perspective. Then, procedure starts alternative grow followed completed top-contact, electrodes interconnections. regard each above-mentioned steps, benefits drawbacks, discussed. conclusions outlook hope will give state-of-the-art researchers field, promoting realization low-cost, circuits.Organic devicesOrganic since they eliminate defects carriers behave differently those semiconductors. In section, briefly structures, p-n junctions, transistors, transistor-based sensors.p-n junctions basic used rectifying function. energy difference junction interfaces enables dissociation, widely applied photovoltaic applications. One parameters length, LEX, Figure 1A. It defines effective thickness contributing effect providing excitons capable reaching interface dissociate.33Ostroverkhova O. materials: mechanisms applications.Chem. 116: 13279-13412Crossref (750) Compared OSCs, which disorder-limited LEX ranging 10 50 nm,34Baldo M.A. Forrest S.R. Interface limited semiconductors.Phys. 2001; 64: 085201Crossref (357) (LEX ∼ 3–8 μm) rubrene observed experimentally.35Najafov Zhou Feldman L.C. Podzorov Observation semiconductors.Nat. 938-943Crossref (372) results imply transported over long distances bulk surface crystal, likely triplet produced fission singlets, ordered. Other than diode-like atomic smooth make them ambipolar As right 1A, realized usually consisting donor-acceptor units bilayer junctions.36Cho S.J. M.J. Wu Son J.H. Jeong Woo H.Y. A-D-A type semiconducting bis(alkylsulfanyl)methylene substituents polarity transistors.ACS Appl. Inter. 41842-41851Crossref Scholar,37Lee E.K. C.H. H.R. Oh Chemically robust directly patterned photolithography.Adv. 1605282Crossref (4) Applying allows independent carrier mobility, facilities balanced transport.38Zhang Y.J. Tang Q.X. Ferdous F. Briseno A.L. nanoribbons.J. Am. 132: 11580-11584Crossref 39Fan C.C. Zoombelt A.P. Fu W.F. J.K. Yuan H.Z. Solution-grown transport.Adv. 25: 5762-5766Crossref (65) 40Wang X.X. Zheng Two-dimensional transistors.Sci. China 63: 122—127Google case, assuming p-type bottom, channel hole dielectric/p-type interface, electron interface. created molecule fluent transport. particular, bottom crucial determines morphology second region. Benefiting flat template film, thermally evaporated top also demonstrate functionality.41Huang Ambipolar dual-function, 2,9-didecyldinaphtho[2,3-b:2′,3′-f ]thieno[3,2-b]thiophene (C10-DNTT) layer.Adv. 1700268Crossref (12) ScholarOFETs fundamental gates more complicated circuits. OFETs, dielectric/OSC described either thermal activation hopping model band-like model.42Troisi Charge mobility semiconductors: classical models theories.Chem. 40: 2347-2358Crossref (317) disordered films, localized process. multiple trapping release (MTR) describe OSCs single-trap energy.43Letizia J.A. Rivnay Facchetti Ratner Marks T.J. Variable temperature analysis n-channel, p-channel, 20: 50-58Crossref (81) physical origin traps could local morphological inhomogeneities, boundaries, states, other defects. MTR model, activated, number mobile charges exponentially increases temperature. Therefore, (μ) follows:43Letizia Scholarμ=μ0exp(EactkT),(Equation 1) where Eact k Boltzmann constant, T absolute temperature, μ0 infinite schematic drawing temperature-dependent 1B. On contrary, exhibit behavior. worth noting that, unlike real band inorganic semiconductors, delocalized crystals. dynamic disorder follows power law μ∼T–n, reported n value ranges 0.5 3.42Troisi Scholar,44Cho J.M. Higashino Mori Band-like down 20 K dioctylbenzothienobenzothiophene.Appl. 2015; 106: 193303Crossref (34) 45Liu Minari X.B. Kumatani Takimiya Tsukagoshi Solution-processable bandlike 23: 523-526Crossref (326) 46Peng Huang Z.W. Solution-processed monolayer ultrasensitive gas 27: 1700999Crossref (70) 47Hannewalda Bobbert P.A. Ab initio theory charge-carrier conduction ultrapure crystals.Appl. 2004; 85: 1535Crossref (173) increase relation until cryogenic case deep trap states extrinsic effects begin dominate. Another distinct extremely density OSC/dielectric bulk. turn-on slope subthreshold inverse swing (SS), defined equation:48Blülle Häusermann Batlogg Approaching trap-free limit transistors.Phys. 034006Crossref (50) ScholarSS=ln(10)kTq(Ci+CSCCi),(Equation 2) q elementary charge, Ci unit-area capacitance transistor, CSC trapped located Based Equation 2, there SS around 59.2 mV/dec room two orders magnitude lower therefore much steeper approaching theoretical limitation.48Blülle Scholar,49Yang Han J.L. B.L. Low-voltage steep slope.ACS Interfaces. 25871-25877Crossref (22) key reducing static consumption off-state zero gate bias, source joule heating when off, illustrated 1B.The amplification makes good sensors. few-layer may suffer discontinuous range S-K growth mode molecules.50Li L.Q. Chi L.F. Controlling films.Adv. Energy 188-193Crossref (29) Monolayer show For sensing, phototransistor prefers dark (off-state current) related base noise level.51Pelayo García de Arquer Armin Meredith Sargent E.H. photodetectors.Nat. 16100Crossref (574) Bulk cannot fully turn off depletion region width positive bias only nanometers. conventional OFET (OSC layer > nm), conductivity dominates current. 1C, situation different comparable width. whole below pA, specific detectivity phototransistors.52Wang Xu B.B. R.H. R.J. H.X. al.Adv. 1706260Crossref (91) promising sensing. adhere then diffuse react through columbic interaction, thus altering exposes molecules, “touch” conductive channel, both sensitivity detection enhanced.46Peng ScholarAs above, play role devices. factors affecting processes better understanding how high-quality Growing aligned lies controlling growth. often regarded stochastic process, leading uncontrolled domain size orientation. force solvent evaporation; tends supersaturation occurs strong evaporation. evaporation rate asymmetric volumes tuning contact line curvature sites.32Diao nucleation, mainly affected evaporation, induces directional convective flow solvent, beneficial addition, balance solute mass guaranteed. lead formation cracks voids dendritic While slow induce accumulation after orientation somehow modified post-process treatment, vapor annealing. largely depends materials, substrate wetting condition, pressure.Strategy technologyRealizing focus and, here, suggest techniques. building device, form brings far functionalities applications, display-driving panels,53Okumoto Ukeda Okumoto Miyamoto Morita Top-emission AMOLED driven TFTs process.J. SID. 575-580Google sensor signal imaging,54Lee Reuveny Jin Q.H. Isoyama Abe al.A bending-insensitive pressure sensor.Nat. Nanotechnol. 11: 472-478Crossref (483) large-scale circuits.55Myny van Veenendaal Gelinck G.H. Genoe Dehaene W. An 8-bit, 40-instructions-per-second microprocessor foil.IEEE Solid-state Circuits. 284-291Crossref (152) Besides individual device-to-device variation critical maintain stable considered candidate applications purity uniformity repeatable controllable, anisotropic characteristics.56Jiang K.K. Ye Wei Guo Liang C.Y. X.D. McNeil L.E. al.Atomically flat, large-sized, two-dimensional nanocrystals.Small. 990-995Crossref (37) This output altered changing direction rather

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Solution‐Processed Vertically Stacked Complementary Organic Circuits with Inkjet‐Printed Routing

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM b...

متن کامل

Controllable lasing performance in solution-processed organic-inorganic hybrid perovskites.

Solution-processed organic-inorganic perovskites are fascinating due to their remarkable photo-conversion efficiency and great potential in the cost-effective, versatile and large-scale manufacturing of optoelectronic devices. In this paper, we demonstrate that the perovskite nanocrystal sizes can be simply controlled by manipulating the precursor solution concentrations in a two-step sequentia...

متن کامل

The first liquid crystalline phthalocyanine derivative capable of edge-on alignment for solution processed organic thin-film transistors.

Tetraoctyl-substituted vanadyl phthalocyanine (OVPc4C8) as a new NIR-absorbing discotic liquid crystalline material can form highly ordered thin films with edge-on alignment of the molecules and molecular packing mode identical to that in the phase II of OVPc for solution processed OTFTs with mobility up to 0.017 cm(2) V(-1) s(-1).

متن کامل

Device Physics of Solution-Processed Organic Field-Effect Transistors

Following the initial demonstration of field-effect conduction in small organic molecules and conjugated polymers, the community of industrial and academic research groups that are interested in using organic semiconductors as the active layer in organic field-effect transistor (OFET) devices has been growing steadily, particularly over the last four to five years. The Institute for Scientific ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Matter

سال: 2021

ISSN: ['2604-7551']

DOI: https://doi.org/10.1016/j.matt.2021.09.002